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document number: 94513 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 1 thyristor/diode and thyristor/thyristor, 135 a to 160 a (new int-a-pak power modules) vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series vishay high power products features ? high voltage ? electrically isolated by dbc ceramic (ai 2 o 3 ) ? 3500 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? modules uses high voltage power thyristor/diodes in three basic configurations ? simple mounting ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for multiple level applications ? dc motor control and drives ? battery charges ? welders ? power converters ? lighting control ? heat and temperature control electrical specifications product summary i t(av) 135 a to 160 a new int-a-pak major ratings and characteristics symbol characteristics vsk.136.. vsk.142.. vsk.162.. units i t(av) 85 c 135 140 160 a i t(rms) 300 310 355 a i tsm 50 hz 3200 4500 4870 60 hz 3360 4712 5100 i 2 t 50 hz 51.5 102 119 ka 2 s 60 hz 47 92.5 108 i 2 t 515.5 1013 1190 ka 2 s v rrm range 400 to 1600 v t j range - 40 to 125 c voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse voltage v v rsm /v dsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 125 c ma vsk.136 vsk.142 vsk.162 04 400 500 50 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94513 2 revision: 04-may-10 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series vishay high power products thyristor/diode and thyristor/thyristo r, 135 a to 160 a (new int-a-pak power modules) forward conduction parameter symbol test condition s vsk.136 vsk.142 vsk.162 units maximum average on -state current at case temperature i t(av) 180 conduction, half sine wave 135 140 160 a 85 85 85 c maximum rms on-state current i t(rms) as ac switch 300 310 355 a maximum peak, one-cycle on-state, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sine half wave, initial t j = t j maximum 3200 4500 4870 t = 8.3 ms 3360 4712 5100 t = 10 ms 100 % v rrm reapplied 2700 3785 4100 t = 8.3 ms 2800 3963 4300 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 51.5 102 119 ka 2 s t = 8.3 ms 47 92.5 108 t = 10 ms 100 % v rrm reapplied 36.5 71.6 84 t = 8.3 ms 33.3 65.4 76.7 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 515.5 1013 1190 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j maximum 0.86 0.83 0.8 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j maximum 1.05 1 0.98 low level value on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j maximum 2.02 1.78 1.67 m high level value on-state slope resistance r t2 (i > x i t(av) ), t j maximum 1.65 1.43 1.38 maximum on-state voltage drop v tm i tm = x i t(av) , t j = 25 c, 180 conduction 1.57 1.55 1.54 v maximum forward voltage drop v fm i tm = x i t(av) , t j = 25 c, 180 conduction 1.57 1.55 1.54 v maximum holding current i h anode supply = 6 v initial i t = 30 a, t j = 25 c 200 ma maximum latching current i l anode supply = 6 v resistive load = 1 gate pulse: 10 v, 100 s, t j = 25 c 400 switching parameter symbol test conditions values units typical delay time t gd t j = 25 c gate current = 1 a, dl g /dt = 1 a/s v d = 0.67 % v drm 1 s typical rise time t gr 2 typical turn-off time t q i tm = 300 a, - dl/dt = 15 a/s; t j = t j maximum v r = 50 v; dv/dt = 20 v/s; gate 0 v, 100 50 to 200 blocking parameter symbol test conditions values units maximum peak reverse and off-state leakage current i rrm , i drm t j = 125 c 50 ma rms insulation voltage v ins 50 hz, circuit to base, all terminals shorted, t = 1 s 3500 v critical rate of rise of off-state voltage dv/dt t j = t j maximum, exponential to 67 % rated v drm 1000 v/s
document number: 94513 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 3 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series thyristor/diode and thyristor/thyristor, 135 a to 160 a (new int-a-pak power modules) vishay high power products note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t p 5 ms, t j = t j maximum 12 w maximum average gate power p g(av) f = 50 hz, t j = t j maximum 3 maximum peak gate current i gm t p 5 ms, t j = t j maximum 3a maximum peak negative gate voltage - v gt 10 v maximum required dc gate voltage to trigger v gt t j = - 40 c anode supply = 6 v, resistive load; r a = 1 4 t j = 25 c 2.5 t j = t j maximum 1.7 maximum required dc gate current to trigger i gt t j = - 40 c 270 ma t j = 25 c 150 t j = t j maximum 80 maximum gate voltage that will not trigger v gd t j = t j maximum, rated v drm applied 0.3 v maximum gate current that will not trigger i gd 10 ma maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a rated v drm applied 300 a/s thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to ca se per junction r thjc dc operation 0.18 0.16 k/w maximum thermal resistance, case to heatsink per module r thcs mounting surface, smooth , flat and greased 0.05 mounting torque 10 % iap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. lubricated threads. 4 to 6 nm busbar to iap approximate weight 200 g 7.1 oz. case style new int-a-pak r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vsk.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017 k/w vsk.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020 vsk.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94513 4 revision: 04-may-10 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series vishay high power products thyristor/diode and thyristor/thyristo r, 135 a to 160 a (new int-a-pak power modules) fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) vsk.136.. series r thjc (dc) = 0.18 k/w 70 80 90 100 110 120 130 0 50 100 150 200 250 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.136.. series r thjc (dc) = 0.18 k/w 0 50 100 150 200 250 300 0 30 60 90 120 150 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 vsk.136.. series per junction t j = 125c 0 50 100 150 200 250 300 350 0 50 100 150 200 250 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) dc 180 120 90 60 30 vsk.136.. series per junction t = 12 5c j 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0 0 1 0 1 1 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge . rrm peak half sine wave on-state current (a) in itial t = 125c at 60 hz 0.0083 s at 50 hz 0.0100 s j vsk.136.. series per junction 1000 1500 2000 2500 3000 3500 1 1 . 0 1 0 . 0 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current of conduction may not be maintained. vsk.1 36.. series per junction in itia l t = 125c no voltage reapplied rated v reapplied j rrm versus pulse train duration. control
document number: 94513 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 5 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series thyristor/diode and thyristor/thyristor, 135 a to 160 a (new int-a-pak power modules) vishay high power products fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics 0255075100125 m a xim um a llo w a b le a m b ient tem p era ture (c) 0 . 0 4 k / w r = 0.01 k / w - r t h s a 0 . 0 8 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 4 k / w 0 . 2 5 k / w 0 . 6 k / w 1 k / w 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 180 120 90 60 30 total rms output current (a) m axim um total on-state power loss (w ) conduction angle vsk.136.. series per module t = 12 5c j 0255075100125 maximum allowable ambient temperature (c) 0 . 0 4 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w 0 . 3 5 k / w 0 . 6 k / w 0 100 200 300 400 500 600 700 800 900 1000 0 55 110 165 220 275 total output current (a) maximum total power loss (w) 2 x vsk.136.. series single phase bridge connected t = 125c j 180 (sine) 180 (rect) r = 0 . 0 1 k / w - r t h a s 0255075100125 m a x im u m a llo w a b le a m b ie n t t e m p e ra tu re (c) r = 0 . 0 4 k / w - r 0 . 0 8 k / w 0 . 1 k / w 0 . 1 6 k / w 0 . 2 5 k / w 0 . 4 k / w 1 k / w t h s a 0 300 600 900 1200 1500 0 100 200 300 400 total o utput current (a) maximum total power loss (w) 120 (rect) 3 x vsk.136.. series three phase bridge connected t = 1 2 5c j
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94513 6 revision: 04-may-10 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series vishay high power products thyristor/diode and thyristor/thyristo r, 135 a to 160 a (new int-a-pak power modules) fig. 10 - current ratings characteristics fig. 11 - current ratings characteristics fig. 12 - on-state po wer loss characteristics fig. 13 - on-state powe r loss characteristics fig. 14 - maximum non-re petitive surge current fig. 15 - maximum non-re petitive surge current 70 80 90 100 110 120 130 0306090120150 30 60 90 120 180 m a x im um a llo w ab le c a se t em p era tur e (c) conduction angle average forward current (a) vsk.142.. series r (d c ) = 0.18 k/w thjc 70 80 90 100 110 120 130 0 50 100 150 200 250 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.142.. series r (d c ) = 0.18 k/w thjc 0 50 100 150 200 250 0306090120150 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 vsk.142.. series per junction t = 12 5c j 0 50 100 150 200 250 300 350 050100150200250 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) vsk.142.. series per junction t = 1 2 5c j 1500 2000 2500 3000 3500 4000 4500 0 0 1 0 1 1 number of equal amplitude half cycle current pulses (n) peak ha lf sin e w ave o n -stat e c urren t (a) j in itial t = 125c at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v applied following surge . vsk.142.. series per junction rrm j 1500 2000 2500 3000 3500 4000 4500 5000 1 1 . 0 1 0 . 0 pea k half sin e w ave o n-state c urren t (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. j no voltage reapplied rated v reapplied vsk.142.. series per junction rrm in itial t = 125c j
document number: 94513 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 7 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series thyristor/diode and thyristor/thyristor, 135 a to 160 a (new int-a-pak power modules) vishay high power products fig. 16 - on-state po wer loss characteristics fig. 17 - on-state po wer loss characteristics fig. 18 - on-state po wer loss characteristics r = 0 . 0 1 k / w - r 0255075100125 m axim um a llo w a b le a m b ient tem p era ture (c) t h s a 0 . 0 4 k / w 1 k / w 0 . 6 k / w 0 . 4 k / w 0 . 2 5 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 100 200 300 400 0 50 100 150 200 250 300 total rm s output current (a) maximum total on-state power loss (w ) conduction angle vsk.142.. series per module t = 12 5c j 180 120 90 60 30 r = 0 . 0 1 k / w - r 0255075100125 maximum allowable ambient temperature (c) t h s a 0 . 6 k / w 0 . 2 5 k / w 0 . 1 6 k / w 0. 1 2 k / w 0 . 0 8 k / w 0 . 0 4 k / w 0 200 400 600 800 1000 0100200300 total o utput current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x vsk.142.. series single phase bridge connected t = 12 5c j 0255075100125 m a xim um a llo w a b le am b ie nt tem p era ture (c) r = 0 . 0 2 k / w - r t h s a 0 . 0 4 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 400 800 1200 1600 0 50 100 150 200 250 300 350 400 450 total output current (a) maximum total power loss (w) 120 (rect) 3 x vsk.142.. series three phase bridge connected t = 125c j
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94513 8 revision: 04-may-10 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series vishay high power products thyristor/diode and thyristor/thyristo r, 135 a to 160 a (new int-a-pak power modules) fig. 19 - current ratings characteristics fig. 20 - current ratings characteristics fig. 21 - on-state po wer loss characteristics fig. 22 - on-state powe r loss characteristics fig. 23 - maximum non-re petitive surge current fig. 24 - maximum non-re petitive surge current 70 80 90 100 110 120 130 0306090120150180 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) vsk.162.. series r (d c ) = 0.16 k/w thjc 60 70 80 90 100 110 120 130 0 50 100150200250300 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.162.. series r (dc) = 0.16 k/w thjc 0 50 100 150 200 250 300 350 400 0 20406080100120140160180 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) vsk.162.. series per junction t = 125c j 180 120 90 60 30 0 50 100 150 200 250 300 350 400 0 306090120150180210240270 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) vsk.162.. series per junction t = 125c j 1500 2000 2500 3000 3500 4000 4500 0 0 1 0 1 1 num ber o f eq ua l am plitud e ha lf c ycle c urrent pulses (n) at any rated load condition and with rate d v a pplie d fo llow ing surg e. rrm peak half sine w ave o n-state c urrent (a) in itia l t = 125c at 60 hz 0.0083 s at 50 hz 0.0100 s vsk.162.. series per junction j 1500 2000 2500 3000 3500 4000 4500 5000 1 1 . 0 1 0 . 0 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current of conduction may not be maintained. vsk.162.. series per junction in itia l t = 125c no voltage reapplied rated v reapplied rrm versus pulse train duration. control j
document number: 94513 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 9 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series thyristor/diode and thyristor/thyristor, 135 a to 160 a (new int-a-pak power modules) vishay high power products fig. 25 - on-state po wer loss characteristics fig. 26 - on-state po wer loss characteristics fig. 27 - on-state po wer loss characteristics 0 25 50 75 100 125 m a xim um a llo w a b le am b ie nt tem p era ture (c) r = 0 . 0 2 k / w - r t h s a 0 . 0 4 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 100 200 300 400 500 600 0 100 200 300 400 180 120 90 60 30 total rms output current (a) maximum total on-state power loss (w) conduction angle vsk.162.. series per module t = 12 5c j r = 0 . 0 4 k / w - r 0255075100125 m a xim um a llo w a b le a m b ient tem p era ture (c) t h s a 0 . 0 8 k / w 0 . 2 k / w 1 k / w 0 . 6 k / w 0 . 4 k / w 0 . 1 2 k / w 0 . 3 k / w 0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 250 300 total output current (a) maximum total power loss (w) 2 x vsk.162.. series single phase bridge connected t = 125c j 180 (sine) 180 (rect) 0 25 50 75 100 125 m a xim um a llo w a b le a m b ie n t te m p e ra tu re (c) r = 0 . 0 2 k / w - r 0 . 0 4 k / w 0 . 2 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 6 k / w 0 . 3 k / w t h s a 0 250 500 750 1000 1250 1500 0 50 100 150 200 250 300 350 400 450 total output current (a) maximum total power loss (w) 120 (rect) 3 x vsk.162.. series three phase bridge connected t = 12 5c j
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94513 10 revision: 04-may-10 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series vishay high power products thyristor/diode and thyristor/thyristo r, 135 a to 160 a (new int-a-pak power modules) fig. 28 - on-state voltage drop characteristics fig. 29 - on-state voltage drop characteristics fig. 30 - on-state voltage drop characteristics fig. 31 - thermal impedance z thjc characteristics fig. 32 - thermal impedance z thjc characteristics fig. 33 - thermal impedance z thjc characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) 1 10 100 1000 10000 012345 t = 25?c j t = 125?c vsk.136.. series per junction j instantaneous on-state voltage (v) instantaneous on-state current (a) 1 10 100 1000 10000 012345 t = 125?c t = 25?c vsk.142.. series per junction j j 1 10 100 1000 10000 012345 t = 25?c j t = 125?c vsk.162.. series per junction j instantaneous on-state voltage (v) instantaneous on-state current (a) square wave pulse duration (s) transient thermal impedance z thjc 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 steady state value (dc operation) vsk.136.. series square wave pulse duration (s) transient thermal impedance z thjc 0.01 0.1 1 0.01 0.1 1 10 steady state value (dc operation) vsk.142.. series square wave pulse duration (s) transient thermal impedance z thjc 0.01 0.1 1 0.01 0.1 1 10 steady state value (dc operation) vsk.162.. series
document number: 94513 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 11 vsk.136..pbf, vsk.142..pbf, vsk.162..pbf series thyristor/diode and thyristor/thyristor, 135 a to 160 a (new int-a-pak power modules) vishay high power products fig. 34 - gate characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration links to related documents dimensions www.vishay.com/doc?95067 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b ) (a) rectangular gate pulse (4) (3) (2) (1) in stan taneous ga te voltage (v ) t j = -40 c t j = 25 c t j = 125 c a)recommended load line for b)recom m end ed loa d line for vgd ig d (1) pgm = 200 w , tp = 300 s (2) pgm = 60 w , tp = 1 m s (3) pgm = 30 w , tp = 2 m s (4) pgm = 12 w , tp = 5 m s <= 30% rated di/dt: 15 v, 40 w tr = 1 s, tp >= 6 s rated di/dt: 20 v, 20 w tr = 0.5 s, tp >= 6 s vsk.136..142..162.. series frequency limited by pg(av) instantaneous gate current (a) 1 - module type 2 - circuit configuration 3 - current rating: i t(av) 4 - voltage code x 100 = v rrm 5 - pbf = lead (pb)-free device code 5 13 24 vsk t 162 / 16 pbf - + vskl... - + ~ k2 g2 - + ~ k1 g1 - + vskh... - + ~ k1 k2 g1 g2 - + vskt...
document number: 95067 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 15-feb-08 1 int-a-pak igbt/thyristor outline dimensions vishay semiconductors dimensions in millimeters (inches) 80 (3.15) ? 6.5 (0.25 dia) 30 (1.18) 9 (0.33) 7 (0.28) 28 (1.10) 29 (1.15) 37 (1.44) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 7 6 5 4 123 23 (0.91) 23 (0.91) 17 (0.67) 35 (1.38) 14.5 (0.57) 3 screws m6 x 10 66 (2.60) 94 (3.70)
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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